1460679041-2a450a5a-1345-41c2-a71b-0e1c0fccdbc2

A high power MOSFET semiconductor having a high breakdown voltage. Depending on the location of distraction, this procedure can be of varying degrees of undesireability. In the portions where the conductive particle is contacted with the terminals facing each other, the insulating film is removed to contact the conductive layer with the terminals. The paper sheet is then ejected. According to this construction, magnetic flux occurring in the electromagnets concentrates, so that restoring force occurs in the axial direction with suppressing reduction of the attractive force in a radial direction to the ferromagnetic portion.