In a fabrication method of semiconductor device, a storage node connected to one of sourcedrain regions of an MOS transistor provided at a semiconductor substrate is formed along a trench provided through a silicon nitride film, a BPTEOS film and a silicon oxide film grown at low temperature. The resin tube has a plurality of resin layers including at least one impact-resistant resin layer formed of a composite material prepared by mixing 65 to 75 parts by weight polyamide 11 resin as a first material and 25 to 35 parts by weight composite polyamide 11 resin prepared by adding a proper amount of an olefin elastomer to polyamide 11 resin as a second material. According to the present invention, the gradient coil is split into sub-coils at least in the direction of the steady magnetic field. In some embodiments, infusion, aspiration and guidewire passage occur through a common lumen.