The vertical bipolar transistor includes an SiGe heterojunction base formed by a stack of layers of silicon and silicon-germanium resting on an initial layer of silicon nitride extending over a side insulation region surrounding the upper part of the intrinsic collector. In particular, control nodes of the distributed computing system utilize software power control modules to communicate with hardware power controllers within the distributed computing system. The program memory consists of a one-time-programmable read only memory and is configured into a plurality of storage sectors. More specifically, opening the package requires the user to: 1) Push through a aperture to create a pull tab; 2) Pull on the pull tab to remove a panel; and 3) Push the blister to force the contents through the blister’s seal.