A method for fabricating a semiconductor structure includes providing a semiconductor substrate having a first region and a second region, and doping top of the semiconductor substrate to form a doped layer at top surface of the semiconductor substrate over the first region and the second region. A semiconductor device configured in accordance with a particular embodiment includes a substrate having a sourcedrain region, an interconnect, and first and second electrodes extending between first and second sides of the substrate. The crystalline semiconductor film of the second plurality of thin film transistors contains a catalyst element which is capable of promoting crystallization of silicon.