The insulated-gate field-effect transistor includes a substrate surmounted by a layer of silicon-germanium alloy, the ratio of the germanium concentration to the silicon concentration of which increases towards the surface of the substrate. The container can respond to one or more individual identifying indicia and unlock one or more storage containers which contain medications to be dispensed to the individual. The data transmitting apparatus 1 is connected to interfaces 200-1 to 200-n including physical lines accommodated therein. 01 to 10% by weight of ultraviolet absorber; and 8 to 90% by weight of solvent.