A semiconductor device is presented which includes a self-aligned, planarized thin-film transistor which can be used in various integrated circuit devices, such as static random access memory cells. The CMOS switch is coupled to Vin and Vout nodes, and contains PMOS and NMOS gates. The final stitch location is selected based upon the line edge values. The powders have the special feature that they have good flow behavior, for one thing, and at the same time, have such a composition that the molded body that can be produced with the powder, using rapid prototyping, has significantly improved mechanical andor thermal properties. It is thus made possible to increase the stacking space, thereby increasing the number of stackable sheets and to achieve the alignment of the rear end of the sheet bundle with a simple configuration, thereby improving the stacking-aligning property of the sheet bundle on the stacking tray.