The present invention discloses a structure of a horizontal surrounding gate flash memory cell and a method for manufacturing the same. The system reads vehicle speed and vehicle yaw rate signals and the maneuver identification processor determines whether the vehicle has made a characteristic passing maneuver. The device may also contain the highlighting composition, either applied on the rolled tape or via a reservoir contained in the body. A plurality of bill passage sensors are sequentially disposed along the transport path that are adapted to detect the passage of a bill as each bill is transported past each sensor. In an embodiment, oxide is removed from the bumps by a subjecting the bumps to an oxide reduction process.