There is provided a flip-chip mounting resin composition which can be used for a flip-chip mounting process that is high in productivity and reliability and thus can be applicable to a flip-chip mounting of a next-generation LSI. Tow side walls are formed on opposite ends of the base. A first photoresist pattern having a two-portion structure is used for selectively removing portions of the gate metal, gate oxide, and silicon layers. Then, it is determined whether or not the non-electrostatic adhesion has been generated based on the comparison of the densities of the second patches formed without changing the development contrast.