The present invention provides a magnetic memory device capable of providing high-speed access without increasing an array area. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. Rotation of the side cutting device in a second direction causes the cutting element to be in a second extended position. In the testinitialization mode, the control circuitry overrides at least one of the signals received from the phase frequency detector to drive the charge pump to generate a selectable test voltage which is used by a voltage controlled oscillator to generate an output signal at a corresponding frequency.