A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including an array of conductive contacts in electrical communication with access circuitry. The catalyst comprises a source of chromium, a ligating compound, and an activator. Located along two longitudinal edges of the bladder is a plurality of laterally extending eyelets. An overall assessment algorithm factors in degradation due to various impairment factors to generate an overall speech quality assessment score or value. After then, a center portion of the semiconductor chip is pressed from its back surface by shifting a second movable plate downward to fill a space between the substrate and the semiconductor chip with the sealing resin.