In the nonvolatile semiconductor memory device of this invention, a program control circuit 1 sets the threshold value of a first reference cell RFC0 by means of a write circuit WC on the basis of a result of comparing the threshold value of the first reference cell RFC0 with the threshold value of a second reference cell SRC executed by a sense amplifier 8 for trimming. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of polymethyl ether acrylate and 1-vinylimidazole; and water. The first end of the tool is adapted to engage the deformable material, move the material to a desired position in the footwear, and shape the material. The balance mass may be a rectangular balance frame having the stators of two linear motors forming the uprights of an H-drive mounted on opposite sides. An imaging system comprising a TDI sensor and a method of imaging an object are also disclosed.