Electronic modules in motor vehicles are reflashed without encountering errors due to insufficient electrical power becoming available during a reflashing. By this, it is possible to make the area of the first substrate 101 minimum. A plurality of graphical program nodes is included in the loop structure in response to second user input. The gate stack of the second MOS device includes a second metal gate on a high-k gate dielectric. 0% by mass of a residual elongation improver based on the mass of the polyester-resin, the FA having an average filament length that is from 1. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer.