The present invention prevents a charge-up during a wiring layer etching in a nonvolatile semiconductor storage apparatus having a floating gate and a control gate to which both of positive and negative voltages are applied during a memory cell operation. The apparatus includes a correlator, an accumulator, a phase calculator, and a frequency offset coupler. The moving rail part is moved along the length direction of the fixing rail part by the operation lever part, and is provided with gear teeth. The method receives instructions to perform a document reconstruction operation.