A nonvolatile memory cell, a memory device and a corresponding production method are disclosed. The plug module has at least one retaining block disposed in the inserting groove of the casing and capable of rotating around the resisting portion of the resilient piece. Because the bit line is precharged by using a precharge transistor opposite in conductivity type to the select transistors, it is satisfactory to provide one precharge transistor for one bit line, greatly reducing the circuit scale. A first of the conductive structures includes a first conductive nano structure and a second of the conductive structures includes a second conductive nano structure.