A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. The receiver includes an RF filter that passes both the image and non-image channels, a frequency generator for generating a local oscillator signal at the local oscillator frequency, and a mixer for mixing the filtered modulated RF signal with said local oscillator signal to generate a modulated intermediate frequency signal. A time difference between each two adjacent phase inversion points among the phase inversion points is calculated.