A method of adjusting or locally modifying the direction of magnetization of a ferromagnetic layer in a magnetoresistive layer system using a heat stamp is described, the ferromagnetic layer being stabilized over an antiferromagnetic layer. As a result, the difference between images caused by the thickness difference in the wafer can be tolerated and the false information generation prevented without adversely affecting the sensitivity. Reduced pressure motivates flow of a second liquid into the second vessel until a predetermined level is reached. One bit line BL connected to the two NAND-type memory cell units ND1 and ND2 is formed via an interlayer dielectric 30. The trace can include spatio-temporal information that is characteristic to a touchless writing style. The calibration value \u03b1 is used in a calibration process to calibrate the detecting position, so that the level of reflected light can be detected with accuracy.