1460716248-6a8dfd29-d72e-40ef-bf8a-b59519b35e06

High frequency offset component information is previously acquired from a solid-state radiation detector. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. The selection unit selects either the first set or the second set. A predetermined clock insertion delay is inserted in each functional block and bus node. A second puller wire is provided having a distal end fixedly attached in the distal end of the catheter body.