A non-volatile memory device and a row decoder, the non-volatile memory device including: a memory cell array comprising a plurality of memory cells and each memory cell includes a first cell transistor and a second cell transistor; and a row decoder comprising a first driver and a second driver for generating first and second control signals. The process involves introducing a radical species into a decarbonized combustion gas. The level shifter generates an output voltage equal to the difference between the outputs of the buffer amplifiers.