There are provided a first insulating film over a semiconductor substrate, a capacitor formed on the first insulating film and having a lower electrode, a ferroelectric film, and an upper electrode, a capacitor-protection insulating film formed on the capacitor to apply a tensile stress of more than 2. The method includes maintaining at each of the nodes a record of respective levels of use of a network resource on the segments in the ring for both the first and second directions of communication. The first seal presents a first outer contact surface that extends in generally parallel relationship to the first edge. In another example, the implantable device includes one or more subcutaneous leads.