In one embodiment, a power integrated circuit device includes a main lateral high-voltage field-effect transistor and an adjacently-located lateral sense FET, both of which are formed on a high-resistivity substrate. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers. The hinge includes an axle, a block retained on the axle with threading engagement therebetween, and an elastic member retained between the axle and the block. Transepithelial ablation is performed utilizing the same CCD used for wavefront analysis by switching between two dichroic mirrors. A relative comparison between Zc curves will provide a clear indication of the overall axial or radial winding movements, or winding faults, which can be used to assess the overall health of the winding. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane.