Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula:R12N\u2014NHnSi4\u2212nwhere each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1\u20134. The device microstructure is attached to the substrate. The apparatus further includes a local sealing inhibition unit including at least one removable local sealing inhibition tool for inhibiting the sealing between the top and bottom webs in at least a second area.