Merging together the drift regions in a low-power trench MOSFET device via a dopant implant through the bottom of the trench permits use of a very small cell pitch, resulting in a very high channel density and a uniformly doped channel and a consequent significant reduction in the channel resistance. At this time, the gap parts 22 is preferably in an approximately oval shape oriented in a uniaxial direction in plan view. The compositions may optionally further contain one or more oxidizing agent, andor one or more surfactant. As the individual frames of a set of frames are generated and sent on the network, they pass other network nodes and are forwarded through the ring bus to the first timing master which receives at least a portion of the set it is still generating. Each CM has a frame collector to which all frames received on various downstream channels are sent.