A method of manufacturing a superjunction device includes providing a semiconductor wafer having a plurality of dies. The second adjustment plate has at least a front end portion housed in an indoor unit front portion outside a blowing path when housed. Smooth alteration of the phases of the OPO beams using the at least one phasor facilitates continuous tuning of the wavelength of at least one of the beams. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.