A sound insulationabsorption structure, a sound insulationabsorption device, and a structure having these applied thereto and a member constituting the same, are capable of insulating or absorbing sound by stiffness control. The first Group III-nitride based layer has an associated first strain. The test circuit of the semiconductor apparatus may include an update register configured to receive and store the clock counting codes based on the overflow signal. The sensor module is coupled to a first damper blade and includes a sensor device operable to determine position information regarding the position of the damper blade. Selecting the voltage swing for each output entails selecting a source current for each buffer stage.