The ESD protective circuit proceeds from a modified lateral pnpn latch-up protective structure having a highly doped n-type zone, which is arranged on the well boundary, along that section of the periphery of the well which runs between the two oppositely doped regions. The grasping member includes grasping lingers that are radially collapsible to the closed positions by movement of the locking member over the fingers. The methods and systems may control intensity, spectral, and other characteristics of lighting devices, such as light-emitting diodes or assemblies thereof, via power lines.