In manufacturing a semiconductor device, an etch stop layer is formed on a cobalt silicide layer during a heat treatment when the cobalt and silicon are transformed in a low resistance phase of cobalt silicide. In this system, complex sequence-correlated peptide expression information and mass spectrum data are processed and stored in a relational database. The first electrode is formed in a surface of a second conductivity-type collector layer opposite to a first conductivity-type first semiconductor layer in the region. The winder also has a winding spindle arranged to be rotatably driven about an axis generally parallel to the longitudinal axis of the first surface contact roll. Each lock member includes a rotatable head that is adapted to be inserted into and secured to the platform. The method includes performing capping processing to put the cap member on the ejecting surface and to suck, and then wiping processing to wipe the ejecting surface with the wiping member, and performing the capping processing again and then waiting a predetermined time without performing the wiping processing.