A semiconductor device including at least one capacitor formed in wiring levels on a silicon-on-insulator substrate, wherein the at least one capacitor is coupled to an active layer of the SOI substrate. At least two material blanks which adjoin one another by opposing narrow sides can be detachably connected to one another without glue by at least one connection fitment which holds together the mutually adjoining narrow sides of the material blanks by at least one screw connection. A combined sagittal image is created from each set of sagittal images.