A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination trench. All of these components can be packaged for integration into a single IC including components such as filters and inductors. The casing further includes a recess connected to the pump chamber for accommodating a stationary pin. The MEMS device is inserted through the aperture and bonded said to the lid with the MEMS device at least partially overlapping the port.