A semiconductor memory device that can transfer data at high speed is provided. In one embodiment, the drive module includes an output terminal for connecting the load. The X-bit voltage DAC section generates an intermediate voltage corresponding to the X-bit MSB subword. Both the receptacle coupling joint and the clamp coupling joint permit movement in more than one plane. The change of state from the first output to the second output is operative to trigger a switching action in the electronic circuitry to open the electric power supply circuit.