This invention discloses bottom-source lateral diffusion MOS device. The second frame rate is substantially lower than the first frame rate. The substrate is irradiated by an ion implantation apparatus with at least one of Ar ions and Si ions with an implantation energy of 40-50 keV, and a dose of 11014 to 51015 cm2. When the body portion is pivotally moved outwardly with respect to the receptacle, the trash container moves outwardly from within the waste receptacle to a position outwardly thereof to facilitate removal of the trash container from the trash container support on the lower end of the body portion.