Materials and a method are provided whereby polymers with least 0. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-\u03bcm2 and good read margin is realized with a dRR of >100% by annealing at 330\xb0 C. One or more of the foregoing features can be implemented in devices such as a die, a packaged module, and a wireless device.