Electrostatic Discharge protection scheme includes a divided rail structure to route damaging ESD away from sensitive circuitry. The mechanism further includes a superlock actuator drivingly connected to a superlock link slidably mounted for movement of the superlock link between a third position corresponding to a superlocked state of the latch and a fourth position corresponding to a non-superlocked state of the latch. The screw has a necked area below the rounded bottom portion which projects through the hole and below that on the longitudinal axis of the screw. The coupler and the two adapters each have an external annular flange which is perforated to receive seizing wire or wire ties to prevent the components from unthreading. In this manner, a tensile stress can be built up in the bridges which exceeds a lowered yield point of the material of the bridges when heated, so that relatively high angle of rotation can be achieved between the two parts of the actuator. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate.