A semiconductor memory cell and forming method thereof utilizes a vertical select transistor to eliminate the problem of a large cell surface area in memory cells of the related art utilizing phase changes. The transmitted signal includes a periodically updated code of a predetermined type and wherein the received signal has CW interference in addition to the transmitted signal. Consequently, the resulting barium titanate powder is highly crystalline and fine. At least one processor compares the outside temperature at at least one location and at least one point in time to information reported to the remote processor from the thermostat. A second flash suppression chamber is defined by the external surface of the conical element, the cylindrical interior surface portion of the body, and the rear portion of the body. The peroxide decomposition catalyst can also be positioned within the membrane.