A retainer clip includes a shaft extending along a clip axis. Each substrate includes a substrate condition, a substrate environment, a substrate process priority, and a substrate area. In a semiconductor device according to the present invention and a manufacturing method thereof, first and second layers are laminated on an oxide film having an opening, and the first layer has the substantially same thermal expansion coefficient as that of the oxide film and has a thermal expansion coefficient different from that of the second layer. When a recording unit for deletion is designated from the table; check boxes are displayed according to information contained in the recording unit.