A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. Each NMOS FET is connected in parallel with a corresponding PMOS FET. In one arrangement, the selectively inserting step can include the step of selectively inserting at least a first dummy predictive picture in the video signal using field-based prediction and subsequent dummy predictive pictures in the trick mode video signal using frame-based prediction.