The improvement of the reliability of a semiconductor device having a split gate type MONOS memory is implemented. An input screen is presented to allow the user to input the user preferences with regard to the substance of the report. Step-delay pre-compensation is performed, in which the input phase signal is phase-adjusted, upstream of the ACR subsystem, based on the sign and magnitude of each detected step-delay. In another embodiment, the system has areas for displaying messages to the user.