In a circuit driving a capacitive load Cp, current passed through a transistor Q3, a diode D1 and a recovering coil L is passed through lines L1, L2, and the inductance components of the lines L1 and L2, and the drain-source capacitances of the transistors Q1 and Q2 generate LC resonance. This converter only required a small capacitance for its DC link and this capacitor can be easily obtainable with other types of capacitors such as film or ceramic type. Alternately, an S-Flash memory cell is converted to a programmed ROM cell by introducing a threshold voltage implant into a substrate region in alignment with an edge of the gate electrode of the S-Flash memory cell. A full length cDNA encoding 22P4F11 is provided.