A semiconductor device includes a substrate having a rectangular shape, and a via hole that has an elliptic shape or a track shape having a linear portion in a long-axis direction of the track shape, a long axis of the elliptic shape or the track shape being arranged in a long-side direction of the substrate. A via hole extends through the electronic component. After the mitigation of correlated interference from first step space process, the second step is to counter fading with MRC which is optimum after the mitigation of correlated interference. 1 grams per square inch of the area of the plan of the cold worked grid which improves the life of a battery in which it is used.