A vertical transistor device and fabrication method thereof are provided, the vertical transistor device comprising a substrate having a deep trench. Such compositions, methods and uses are particularly effective in controlling formation of starburst-type anomalies. The two polysilicon gate electrodes are divided into a first and a second gate electrode, both gate electrodes are imbedded in a layer of Intra Metal Dielectric. An inventory control helper system connected to the purchase order system and the sales order system generates inventory control data based upon the sales order data and the purchase order data.