Semiconductor structures that include bodies of a semiconductor material spaced apart from an underlying substrate. The shielding layer is folded back so as to cover outside of the closed magnetic path core and a tip portion of the shielding layer is connected to the shielding metal cover. Next, the method forms the movable structure on the device wafer, and then removes substantially the entire initial bottom side of the device wafer. The resulting cross scan beginning and end having improved perpendicularity relative to the underlying substrate.