A semiconductor memory cell having a data storage element constructed around an ultra-thin dielectric, such as a gate oxide, is used to store information by stressing the ultra-thin dielectric into breakdown to set the leakage current level of the memory cell. A concentration sensor and a communications device are coupled so as to be able to measure and transmit the concentration of a particular substance within the filter housing while in use. Further, the digital images of each image group are subjected to an inter-image wavelet transformation. 0; sealing the container and then subjecting the container to sterilization at a temperature from about 60\xb0 C.