An EL device comprising a first electrode, an EL layer formed on the first electrode, and a second electrode formed on the EL layer, wherein at least one layer of a material whose wettability changes when light is applied thereto is formed. The method includes coating a first oxide layer on a semiconductor substrate and removing a predetermined width of the first oxide layer; forming an LDD region in the substrate; forming a gate spacer on the substrate; forming a channel in the LDD region, forming a gate oxide layer; forming a polysilicon gate electrode; and forming sourcedrain diffusion regions. A majority function logic circuit can be interconnected this way using far fewer gates than with a conventional CMOS implementation. The preset invention lies in an encapsulated semiconductor device comprising:. The time during which the inlet valve is open is determined as a function of a specified characteristic parameter of the synchronization process.