A liquid discharge apparatus includes a discharge section, a charge supply source, first and second signal paths, a control signal generation section and a connection path selection section. A first p-n junction is formed on or over the textured surface from III-V semiconductor materials. The composite layer of low k silicon oxide dielectric material is formed by depositing, in high aspect ratio regions between closely spaced apart metal lines, a first layer of low k silicon oxide dielectric material exhibiting void-free deposition properties until the resulting deposition of low k silicon oxide dielectric material reaches the level of the top of the metal lines on the oxide layer. The groove has opposing walls that define a tapered width of the groove such that the width becomes wider nearer an end of the shaft. A creep characteristic is adjusted by a thickness of the strain generated portion in a portion corresponding to the inversion portion. According to the invention, these two parts are in direct contact via a movement transmission element, movement of one of them giving rise to movement of the other.