A method of forming a semiconductor device includes forming an under-bump metallurgy layer overlying a portion of a metal pad region within an opening of an encapsulating layer over a semiconductor substrate, and forming a bump layer overlying the UBM layer to fill the opening of the encapsulating layer. The hardmask protects the second polysilicon layer during a SAS etch process. The adjustable length of the brow bar provides excellent adjustability of the overall width of the eyeglass frame in simple mechanical construction. Buyer offer information, associated with a buyer offering to make a purchase, is also received.