Methods of forming T-gate structures on a substrate are provided that use only UV-sensitive photoresists. The drawer includes a retractable handle that is substantially flush with the drawer when the drawer is closed. The transitioning by clusters or chapters can be sustained for some duration that is determined by, for example, the duration of time during which the input is sustained. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.