In a semiconductor device having memory cells and peripheral circuits, the memory cells and the peripheral circuits are formed on a semiconductor substrate. A styrene foamed film characterized by having at least one foamed layer which contains a resin composition comprising from 20 to 100 parts by mass of the following and from 0 to 80 parts by mass of the following and which has a thickness of from 30 to 200 \u03bcm and a specific gravity of from 0. Thereupon the upper edge zones are released and the objects with the assistance of the force of gravity are positioned on an onward conveying means, selectively either the downstream or the upstream main surface facing upwards. The cam preferably includes a lateral cusp at the end of each curved path, the cusp defining a transition from the curved path to the recess.