The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The electrical connector assembly also includes a circuit board having an upper surface and a lower surface with vias extending at least partially through the circuit board along parallel via axes. The first aspect is that an equipment constant is determined and an unknown void or particle content is calculated based on the equipment constant. Next there are the steps of cleaning residues from the surface of the device, and then directing high-temperature hydrogen gas over the exposed surfaces of the sacrificial layer to convert the silicon dioxide to a gas, which is carried away from the device by the hydrogen gas. An outlet air passageway of the supercharger-intercooler is configured to contact an air passageway of the air cleaner unit. A router within the switching system may receive the data signals from the switch on a second VC, determine a third VC for the data signals, and route the data signals to the switch on the third VC for communication out of the switching system on the third VC.