A method of manufacturing a non-volatile memory is provided. In one embodiment, the apparatus includes a number of processing elements and task routing logic. Information demanded by a user can be detected in real time and provided through a voice interface with versatile and familiar dialogues based on the user’s tendencies. This may be done using a selective sputtering process. Consequently, with a semiconductor device of the CMOS structure, it is possible to prevent unwanted creeping of silicide that occurs often in the shallow junction region depending on a concentration of an impurity having a low diffusion coefficient as represented by arsenic. As a result, when this BHT photomask is used to make a three-dimensional microscopic structure, it is possible to produce a smoother and more linear profile on the object being made.