A magnetoresistive memory device 20 includes dies 24 and 38, each of which contains magnetically sensitive material 50. In a preferred embodiment of the present invention thin-film batteries fabricated onto a thin, flexible stainless steel foil substrate using an appropriate barrier layer that is composed of barrier sublayers have uncompromised electrochemical performance compared to thin-film batteries fabricated onto ceramic substrates when using a 700\xb0 C. A queue data set associated with a largest number of messages in the queue is identified from within the plurality of queue data sets and, thereafter, a target-queue size is determined using queue data associated with the largest number of messages in the queue. As a result, the adjustment of the angle of the adjusting rod enables the change on the vertical position of the treadle planks so that an independent right and left adjustment of the exercise pace is achieved. The transistors of the differential pair, the current mirror, and the follower transistor are operatively coupled such that during operation an amplitude of a signal output from the follower transistor is proportional to an amplitude of an signal input into the differential pair. The direct cooking chamber preferably has a lid that is operable to lock when it is in an open position.