A method of processing a semiconductor device is disclosed and comprises patterning a multi-layer photoresist which comprises an imaging layer overlying an underlying layer. The second zone may be different from the first zone. Particularly, the rise-spoiling member extrudes downward to a position below an upper edge of the port and extends from the pickup roller to the vicinity of the side wall of the case. Tensile loads acting on the buckle are transferred into the underframe. Alternatively, the composition can be administered as a liquid with an active agent dissolved or dispersed in the composition.